Highly reliable and mass-productive FRAM embedded smartcard using advanced integration technologies

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345445

H. Joo, Y.J. Song, H.H. Kim, S.K. Kang, J. Park, Y. Kang, E. Y. Kang, S.Y. Lee, H. Jeong, Kinam Kim

引用次数: 12

Abstract

We developed FRAM embedded smartcard in which FRAM replace EEPROM and SRAM to improve the read/write cycle time and endurance of data memories in smartcard. Highly reliable sensing window for FRAM embedded smartcard was achieved by advanced integration technologies such as novel capacitor technology, multi-level encapsulating barrier layer (EBL) technology, and optimal inter-metallic dielectrics (IMD) technology.

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采用先进集成技术的高可靠性和大批量生产的FRAM嵌入式智能卡

我们开发了FRAM嵌入式智能卡，FRAM取代了EEPROM和SRAM，提高了智能卡中数据存储器的读写周期时间和耐用性。采用新型电容技术、多层封装阻挡层(EBL)技术、最优金属间介电体(IMD)技术等先进集成技术，实现了FRAM嵌入式智能卡高可靠的传感窗口。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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