A novel monolithic HEMT harmonic mixer at Q-band

R. Katz, S. Maas, A. Sharma, D. Smith
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引用次数: 11

Abstract

A novel Q-band monolithic harmonic mixer has been designed and fabricated using the 0.15 /spl mu/m pseudomorphic InGaAs-GaAs HEMT process for the first time. This high performance mixer is capable of downconverting a Q-band RF signal with the 12th, 14th or 16th harmonic of a S-band LO signal to produce a signal suitable for a phase locked loop. This compact mixer consists of antiparallel HEMT Schottky diodes with a lumped element IF and LO diplexer and a RF band-pass filter. Measured data shows agreement between simulations and measurements. Total chip size is 1.0 mm/spl times/2.5 mm.<>
一种新型q波段单片HEMT谐波混频器
首次采用0.15 /spl μ m假晶InGaAs-GaAs HEMT工艺设计并制作了一种新型q波段单片谐波混频器。这款高性能混频器能够将q波段RF信号与s波段LO信号的12、14或16次谐波进行下变频,从而产生适合锁相环的信号。这个紧凑的混频器由反平行的HEMT肖特基二极管与集总元件中频和低通双工器和射频带通滤波器组成。实测数据与模拟结果一致。总芯片尺寸为1.0 mm/spl倍/2.5 mm
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