Wideband 0.18μm CMOS VCO using active inductor with negative resistance

Grzegorz Szczepkowski, G. Baldwin, R. Farrell
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引用次数: 33

Abstract

This paper presents a wideband voltage controlled oscillator topology based on an active inductor generating negative resistance. The proposed architecture covers a frequency band between 1.325 GHz - 2.15 GHz with average in-band phase noise of -86 dBc/Hz at 1 MHz offset from the carrier frequency. Power consumption of the oscillator core is 28 mW from a 1.8 V supply. The circuit has been simulated in Eldo RF (Design Architect IC, Mentor Graphics) using UMC 0.18 mum 1P6M Salicide RF CMOS model libraries.
采用负电阻有源电感的宽带0.18μm CMOS压控振荡器
提出了一种基于有源电感产生负电阻的宽带压控振荡器拓扑结构。所提出的架构覆盖1.325 GHz - 2.15 GHz的频段,在与载波频率偏移1 MHz时,平均带内相位噪声为-86 dBc/Hz。振荡器芯的功耗为28mw,来自1.8 V电源。该电路已在Eldo RF (Design Architect IC, Mentor Graphics)中使用UMC 0.18 mum 1P6M Salicide RF CMOS模型库进行了仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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