dV/dt effects in mosfet and bipolar junction transistor switches

Abstract

Spurious turn-on due to dV/dt triggering is a real possibility in high speed switching circuits using MOSFETs or bipolar junction transistors (BJTs). This paper discusses the mechanisms leading to spurious turn-on, test methods to determine dV/dt limits, the effect of dV/dt turn-on circuit operation, and methods to minimize dV/dt triggering in practical circuits.