Dark Current and Noise in Diffused and Epitaxial InAs Photodiodes

Abstract

A comparative analysis of the mechanisms of dark current and noise in InAs homo- and heterojunction photodiodes is carried out. It is shown that an excess current of a tunneling nature is the cause of the low-frequency 1/f noise at low temperatures. At high temperatures, the main source of noise is the generation-recombination current in the depleted area. Theoretical models of noise in infrared photodiodes are analyzed as applied to the experimental results obtained in this work.