SiGe Circuits for Future LEO Constellations

M. Margalef-Rovira, N. Defrance, G. Ducournau
{"title":"SiGe Circuits for Future LEO Constellations","authors":"M. Margalef-Rovira, N. Defrance, G. Ducournau","doi":"10.1109/mms55062.2022.9825590","DOIUrl":null,"url":null,"abstract":"This work presents an overview of the current state-of-the-art Power Amplifiers and Low-Noise amplifiers in the 40–75 GHz frequency band (i.e., V -band). These RF blocks are critical for the development of future LEO constellations that have recently begun to target these frequencies. Special attention is brought to GaAs, GaN, SiGe, FDSOI and classical CMOS technologies. The aim of the paper is to give a clear overview of the attainable performances with each technology as well as their relative trade-offs.","PeriodicalId":124088,"journal":{"name":"2022 Microwave Mediterranean Symposium (MMS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Microwave Mediterranean Symposium (MMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mms55062.2022.9825590","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This work presents an overview of the current state-of-the-art Power Amplifiers and Low-Noise amplifiers in the 40–75 GHz frequency band (i.e., V -band). These RF blocks are critical for the development of future LEO constellations that have recently begun to target these frequencies. Special attention is brought to GaAs, GaN, SiGe, FDSOI and classical CMOS technologies. The aim of the paper is to give a clear overview of the attainable performances with each technology as well as their relative trade-offs.
未来狮子座星座的SiGe电路
这项工作概述了目前40-75 GHz频段(即V频段)最先进的功率放大器和低噪声放大器。这些RF块对于最近开始瞄准这些频率的未来LEO星座的发展至关重要。特别关注GaAs, GaN, SiGe, FDSOI和经典CMOS技术。本文的目的是对每种技术可实现的性能以及它们的相对权衡给出一个清晰的概述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信