Loss and index change in GaInAsP/InP multiple quantum well QCSE tuning element for surface emitting lasers

N. Yokouchi, T. Uchida, T. Miyamoto, Y. Inaba, K. Mori, F. Koyama, K. Iga
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Abstract

The authors investigated some fundamental characteristics of chemical beam epitaxy (CBE) grown GaInAsP/InP multiple quantum wells (MQWs) for a wavelength tuner and estimated the wavelength shift for realizing wavelength tunable surface emitting (SE) lasers. They observed the quantum confined Stark effect in a GaInAsP/InP MQW structure grown by CBE and estimated the refractive index change, which was as large as 1%. By using these results, the possibility realizing a wavelength tunable SE laser with a MQW tuner is exhibited and the maximum wavelength change is expected to be as large as 7/spl Aring/.<>
表面发射激光器GaInAsP/InP多量子阱QCSE调谐元件损耗及折射率变化
研究了用于波长调谐器的化学束外延(CBE)生长GaInAsP/InP多量子阱(MQWs)的一些基本特性,并估计了实现波长可调谐表面发射(SE)激光器的波长位移。他们在CBE生长的GaInAsP/InP MQW结构中观察到量子受限的Stark效应,并估计折射率变化高达1%。利用这些结果,展示了利用MQW调谐器实现波长可调谐SE激光器的可能性,并且最大波长变化有望达到7/spl / /。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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