An integrated dual-band SiGe HBT low noise amplifier

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI:10.1109/RFIT.2005.1598907

Chengyu Huang, Y. Hsin

引用次数: 0

Abstract

A common-base cascade dual-band low noise amplifier (LNA) for 2.4 and 5.8 GHz is presented in this paper. The LNA design is based on SiGe HBT (TSMC 0.35 /spl mu/m BiCMOS) technology. At 2.4 GHz, the LNA performs a noise figure of 4.3 dB, associated gain of 11.1 dB, IIP3 of -4.4 dBm, and OIP3 of 5.3 dBm. At 5.8 GHz, the LNA performs a noise figure of 5.4 dB, associated gain of 5.11 dB, IIP3 of 3.7 dBm, and OIP3 of 7.3 dBm. The dc power consumption is 8.4 mW and the chip size is 0.86 /spl times/ 0.58 mm/sup 2/.

查看原文本刊更多论文

一种集成双频SiGe HBT低噪声放大器

提出了一种2.4 GHz和5.8 GHz的共基级联双频低噪声放大器。LNA设计基于SiGe HBT (TSMC 0.35 /spl mu/m BiCMOS)技术。在2.4 GHz时，LNA的噪声系数为4.3 dB，相关增益为11.1 dB, IIP3为-4.4 dBm, OIP3为5.3 dBm。在5.8 GHz时，LNA的噪声系数为5.4 dB，相关增益为5.11 dB, IIP3为3.7 dBm, OIP3为7.3 dBm。直流功耗为8.4 mW，芯片尺寸为0.86 /spl倍/ 0.58 mm/sup 2/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks

自引率

0.00%

发文量