Improved single-diode modeling approach for photovoltaic modules using data sheet

T. T. Yetayew, T. Jyothsna
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引用次数: 26

Abstract

This paper proposed an improved single diode photovoltaic module model over the Rp-model (single-diode, five parameter model) based on datasheet values. Rp-model is widely in use being a compromise among other diode models in simplicity and accuracy. However, the model has major drawback at low irradiance level that is deviation from experimental data in the vicinity of open circuit voltage. And this drawback was improved using two diode model at the expense of increased complexity, parameters, and computation time. The main contribution of this paper is an improved single diode model partly using empirically determined points. Like the Rp-model it has simplicity and improved accuracy, unlike the Rp-model showed a significant reduction in absolute error from the experimental data especially at low irradiance level in the vicinity of open circuit voltage. The performance of model was verified against the experimental data for three common PV module technologies: Mono-crystalline silicon, multi-crystalline silicon, and Thin-film (CIS). The performance of three module types using Rp-model and proposed model was compared against the experimental data. The I-V characteristic and absolute relative error plots of module current revealed the significant improvement of the proposed model over the Rp model.
改进的单二极管光伏组件数据表建模方法
在rp模型(single-diode, five parameter model)的基础上,提出了一种基于数据表值的改进的单二极管光伏组件模型。rp模型作为一种折衷的模型,在简单性和准确性方面得到了广泛的应用。然而,该模型在低辐照水平下存在较大的缺陷,即在开路电压附近与实验数据存在偏差。使用双二极管模型可以改善这一缺点,但代价是增加了复杂性、参数和计算时间。本文的主要贡献是改进了单二极管模型,部分使用了经验确定的点。与rp模型一样,它具有简单性和准确性的提高,与rp模型不同的是,rp模型显示出实验数据的绝对误差显著降低,特别是在开路电压附近的低辐照水平下。通过对单晶硅、多晶硅和薄膜三种常见光伏组件技术的实验数据验证了模型的性能。将rp模型和所提模型的三种模块类型的性能与实验数据进行了比较。模块电流的I-V特性图和绝对相对误差图表明,该模型比Rp模型有了显著的改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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