Electromechanical resonator based bandpass sigma-delta modulator for wireless transceivers

Y. Xu, R. Yu
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引用次数: 6

Abstract

Bandpass sigma-delta modulators commonly employ switch-capacitor (SC) or continuous-time (CT) loop filters. SC sigma-delta modulator can provide robust performance, but at low center frequencies. Its CT counterpart is able to operate at much high frequency, but its performance is often impaired by low-Q CT loop filters and the need of frequency tuning. In this paper, an alternative approach is introduced. Bandpass sigma-delta modulators employing electromechanical resonators as loop filter are described. As a proof-of-concept, a second- and fourth-order bandpass sigma-delta modulator are demonstrated in a 0.35-/spl mu/m CMOS process using off-chip SAW resonators with a resonant frequency of 47.3 MHz. The dynamic ranges, measured in a 200-kHz signal bandwidth when sampled at 189.2 MHz, are 57 dB and 69 dB for the second- and fourth-order modulator, respectively. The chips operate under a 3.3-V single supply with a power dissipation of 30 and 45 mW, respectively.
基于机电谐振器的无线收发器带通σ - δ调制器
带通σ - δ调制器通常采用开关电容(SC)或连续时间(CT)环路滤波器。SC σ - δ调制器可以提供鲁棒性能,但在低中心频率。其对应的CT能够在高频率下工作,但其性能经常受到低q CT环路滤波器和频率调谐需求的影响。本文介绍了另一种方法。描述了采用机电谐振器作为环路滤波器的带通σ - δ调制器。作为概念验证,在0.35-/spl mu/m CMOS工艺中,使用片外SAW谐振器演示了二阶和四阶带通sigma-delta调制器,谐振频率为47.3 MHz。当采样频率为189.2 MHz时,在200 khz信号带宽下测量的动态范围为二阶和四阶调制器分别为57 dB和69 dB。芯片工作在3.3 v单电源下,功耗分别为30和45 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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