Significant role of cold carriers for dielectric breakdown in HfSiON

Abstract

Dielectric breakdown mechanisms in HfSiON were thoroughly investigated by utilizing the substrate hot carrier injection. It was found that the total hole fluence (Q/sub p/) dose not dominate the breakdown in HfSiON. Furthermore, it was experimentally clarified that the injected electrons into HfSiON have the significant role for the breakdown, irrespective of their potential energy. This result strongly suggests that the roles of injected cold electrons in HfSiON are remarkably different from those in SiO/sub 2/ and SiON.