Reduction of substrate-induced gate lag in GaAs MESFETs

Abstract

Methods to suppress substrate trap-induced gate lag in ion-implanted GaAs MESFETs have been investigated in detail. It was found that the methods generally involve a supply of holes which can combine with the trapped electrons which are the culprits of gate lag. For high-power amplifiers employing high drain voltages, holes can be supplied through impact ionization. For battery-operated amplifiers employing low drain voltages, holes can be supplied through a contact to the buried p-layer.