Photovoltaic characteristics of CuInS/sub 2//CdS heterojunction

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496346

G. Park, Jin Lee, H. Chung, W. Jeong, Jae-cheol Cho, Y. Jeong, Y. Yoo

引用次数: 0

Abstract

CuInS/sub 2//CdS heterojunction has been fabricated by depositing CdS thin film with dopant In on ternary compound CuInS/sub 2/ thin film. Its best conversion efficiency was 5.66% under the illumination of 100 mW/cm/sup 2/, and its series resistance and lattice mismatch was 5.1 /spl Omega/ and 3.2% respectively. Besides, 4-layer structure heterojunction of low /spl rho/-CuInS/sub 2//high /spl rho/-CuInS/sub 2//high /spl rho/-CdS/low /spl rho/-CdS has been fabricated. Its bast conversion efficiency was 8.25% under the illumination of 100 mW/cm/sup 2/, and its series resistance and lattice mismatch was 4.3 /spl Omega/ and 2.8% respectively.

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CuInS/ sub2 //CdS异质结的光伏特性

通过在三元化合物CuInS/sub - 2/薄膜上沉积掺杂In的CdS薄膜，制备了CuInS/sub - 2/ CdS异质结。在100mw /cm/sup 2/的光照下，其最佳转换效率为5.66%，串联电阻和晶格失配分别为5.1 /spl ω /和3.2%。此外，还制备了低/spl rho/-CuInS/sub 2//高/spl rho/-CuInS/sub 2//高/spl rho/-CdS/低/spl rho/-CdS的四层异质结结构。在100mw /cm/sup 2/的光照下，其基底转换效率为8.25%，串联电阻和晶格失配分别为4.3 /spl ω /和2.8%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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