A Selectively Colorful yet Chilly Perspective on the Highs and Lows of Dielectric Materials for CMOS Nanoelectronics

S. King, J. Plombon, J. Bielefeld, J. Blackwell, S. Vyas, R. Chebiam, C. Naylor, D. Michalak, M. Kobrinsky, F. Gstrein, M. Metz, J. Clarke, R. Thapa, M. Paquette, V. Vemuri, N. Strandwitz, Y. Fan, M. Orlowski
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引用次数: 2

Abstract

The remarkable advancement of CMOS electronics over the past two decades has been greatly aided by innovations allowing dielectric scaling across both ends of the permittivity spectrum. This paper describes how new dielectric innovations beyond permittivity scaling will allow both the extension of Moore’s law for another decade and usher in an array of new devices and computational paradigms.
CMOS纳米电子学中介电材料的高与低的选择性多彩而寒冷的视角
在过去的二十年中,CMOS电子器件的显著进步很大程度上得益于介电常数谱两端介电尺度的创新。本文描述了介电常数缩放之外的新介电创新将如何使摩尔定律再延长十年,并引入一系列新设备和计算范式。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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