Influence of ammonium tungstate additive in metallization baths on Ni-Cu-P resistive layer properties

Abstract

The paper concerns research on the impact of ammonium tungstate additive in metallization baths on chemical properties of thin Ni-Cu-P resistive layers produced by means of chemical metallization. Material properties were modified by forming a Ni-Cu-P layer in the presence of tungsten ions. Layers obtained in this manner were examined for possibility of application in production of precision film resistors with a near 0 [ppm/K] temperature coefficient of resistance (TCR). The influence of time of ammonium tungstate introduction into a metallization bath on the Ni-Cu-P resistive layer deposition process has been examined and analyzed.