A novel sub-50 nm multi-bridge-channel MOSFET (MBCFET) with extremely high performance

Abstract

We demonstrate highly manufacturable sub-50 nm MBCFET with the I/sub on/ of 4.26 mA/ /spl mu/m at V/sub DD/ = 1.2V, which is the best performance ever reported. This excellent performance of the MBCFET is resulted from the vertically stacked channels and enhanced mobility. It has been fabricated on bulk Si substrate by using the multiple epitaxial growth of SiGe/Si/SiGe/Si layers and damascene gate process. It has structural and electrical merits in scaling and process integration.