Performance of TIOHOS Device with stack gate for UV Total Dose Nonvolatile Sensor

Abstract

A device with the layers of titanium nitride–indium tin oxide–silicon oxide–hafnium oxide–silicon oxide–silicon with a double gate of titanium nitride/indium-tin-oxide TiN/ITO (TIOHOS with TiN/ITO double gate) was applied to the total dose of UV radiation (UV TD) in a nonvolatile sensor. The threshold voltage VT of the TIOHOS device increased after UV radiation, which has a relationship to UV TD. The TIOHOS with TiN/ITO double gate reduced the gate UV absorption coefficient more than TiN and the gate electric resistivity more than ITO. The TIOHOS device with TiN/ITO double gate successfully increased the performance of a nonvolatile UV TD sensor which is better than that of titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon device TOHOS (with TiN gate) and indium tin oxide –silicon oxide–hafnium oxide–silicon oxide–silicon IOHOS (with ITO gate). To eliminate the UV TD information in the TIOHOS UV TD sensor and let the UV TD become a natural invalid state, positive charges were injected by applying a negative bias on the control gate (NBS). It is proved that the TIOHOS with TiN/ITO double gate was appropriate for nonvolatile UV TD radiation sensors.