Impact of ion implantation statistics on V/sub T/ fluctuations in MOSFETs: comparison between decaborane and boron channel implants

Abstract

MOSFETs with virtually identical doping profiles and DC behaviour exhibit significantly larger stochastic threshold voltage fluctuations when the channel is implanted using decaborane (B/sub 10/H/sub 14/) as compared to those with conventional boron implanted channels. This paper presents a unique experimental confirmation of the contribution of ion implantation statistics to V/sub T/ fluctuations.