Impact of High-Energy Proton Irradiation on MoS2 Films and Its Field Effect Transistors

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745685

Huiping Zhu, Lei Wang, Jingyuan Shi, Xin-nan Huang, Z. Zheng, Guodong Xiong, Bo Li, Q. Gao, Bin Yang, Jiajun Luo, Zhengsheng Han, Xinyu Liu

引用次数: 0

Abstract

Sulfur vacancies introduced by proton irradiation in the MoS2 film cause the multilayer MoS2 to be decoupled, resulting in a indirect-to-direct bandgap transition. Unlike the irradiation-introduced interface states, sulfur vacancies can improve the performance of MoS2 FET devices.

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高能质子辐照对MoS2薄膜及其场效应晶体管的影响

质子辐照在MoS2薄膜中引入的硫空位导致多层MoS2去耦，导致间接到直接的带隙跃迁。与辐照引入的界面态不同，硫空位可以改善MoS2 FET器件的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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