Quantum Hall resistance standards from a high-mobility molecular beam epitaxy system

Abstract

We study magnetotransport properties and Hall resistance quantization in a set of AlGaAs/GaAs heterostructures grown in a high-mobility molecular beam epitaxy system. The data show that, with an appropriate choice of growth parameters, the electron mobility in such heterostructures can be reduced and we find good resistance quantization allowing for metrological application.