Latch-up characteristics of a trench-gate conductivity modulated power transistor

Cai Jun, J. Sin, W. Ng, P. Lai
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Abstract

In this paper, a new conductivity modulated power transistor, called the Lateral Trench-Gate Bipolar Transistor (LTGBT), is presented. The current at which the latch-up occurs in the structure is estimated in comparison with that of the LIGBT. The latch-up current density for the LTGBT exhibits more than 7.7 times improvement over the LIGBT. The dependence of the latch-up current density on the design of the n/sup +/ and p/sup +/ cathode regions of the structure is also examined. The maximum controllable latch-up current density is found to increase with decreasing the space between the trench gate and the p/sup +/ cathode.
沟槽栅电导率调制功率晶体管的锁存特性
本文提出了一种新型的电导率调制功率晶体管,称为横向沟栅双极晶体管(LTGBT)。在结构中发生锁存时的电流是通过与light的电流进行比较来估计的。LTGBT的锁存电流密度比light提高了7.7倍以上。锁存电流密度对结构的n/sup +/和p/sup +/阴极区设计的依赖性也进行了研究。最大可控锁存电流密度随着沟槽栅极与p/sup +/阴极间距的减小而增大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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