High-speed performance of NpN InGaAsN-based double heterojunction bipolar transistors

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964376

A. Baca, C. Monier, P. Chang, N. Li, F. Newman, E. Armour, S.Z. Sun, H. Hou

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引用次数: 3

Abstract

We report the fabrication of double heterojunction bipolar transistors (DHBTs) with the use of a new quaternary InGaAsN material system that takes advantage of a low energy band gap in the base to reduce operating voltages in GaAs-based electronic devices. InGaP/In/sub 0.03/Ga/sub 0.97/As/sub 0.99/N/sub 0.01//GaAs DHBTs with improved band gap engineering at both heterojunctions exhibit a DC peak current gain over 16 with small active emitter area. The use of the InGaAsN base layer allows a significant reduction of the turn-on voltage by 250 mV for the new technology over a standard InGaP/GaAs HBT, while maintaining high-frequency characteristics with cut-off frequency and maximum oscillation frequency as high as 40 GHz and 70 GHz, respectively. This technology is promising for next generation RF circuits using GaAs-based HBTs by reducing the operating voltage for low power consumption and better handling of supply voltages in advanced wireless handsets.

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基于NpN ingaasn的双异质结双极晶体管的高速性能

我们报道了双异质结双极晶体管(dhbt)的制造，使用一种新的四元InGaAsN材料系统，利用低能带隙的基础来降低gaas基电子器件的工作电压。在两个异质结处改进带隙工程的InGaP/In/sub 0.03/Ga/sub 0.97/As/sub 0.99/N/sub 0.01/ GaAs dhbt具有大于16的直流峰值电流增益和较小的有源发射极面积。与标准InGaP/GaAs HBT相比，InGaAsN基础层的使用可以将新技术的导通电压显著降低250 mV，同时保持高频特性，截止频率和最大振荡频率分别高达40 GHz和70 GHz。这项技术通过降低工作电压以实现低功耗和更好地处理先进无线手机的电源电压，有望用于使用基于gaas的hbt的下一代射频电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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