Heat conduction properties of graphene: Prospects of thermal management applications

A. Balandin
{"title":"Heat conduction properties of graphene: Prospects of thermal management applications","authors":"A. Balandin","doi":"10.1109/STHERM.2011.5767183","DOIUrl":null,"url":null,"abstract":"As the electronic industry moves towards few-nanometer-scale CMOS and 3D IC designs thermal management becomes crucially important for achieving high performance and reliability of advanced electronic chips [1]. One approach for mitigating the self-heating problems is finding materials with very high thermal conductivity, which can be integrated with Si ICs or used as fillers in the next generation of the thermal interface materials (TIMs). In 2008, we discovered that graphene reveals extremely high intrinsic thermal conductivity, which can exceed that of bulk graphite [2–3]. To measure the thermal conductivity of an object with a thickness of just one atomic layer, we developed an original experimental technique and applied it to graphene flake suspended across trenches in Si wafers. In this technique, the micro-Raman spectrometer performed the function of a thermometer measuring the local temperature rise from the shift in the spectral position of the Raman G peak. We explained the fact that the intrinsic thermal conductivity of graphene can be larger than that of graphite by the fundamental difference in the low-energy phonon transport in 2D graphene and 3D graphite [4–6]. The extremely high thermal conductivity of “free” suspended graphene does not mean that it will be automatically preserved when graphene is incorporated inside semiconductor chips or composite TIMs. Thermal conductivity of graphene layers depends strongly on their geometrical size, coupling to the adjacent substrate or capping layers, edges roughness and defect concentration. I will overview the experimental and theoretical results for the thermal conductivity evolution of the few-layer graphene (FLG) considering two limiting cases of the phonon transport limited by the intrinsic and extrinsic effects. The use of graphene as interconnects and heat spreaders in advanced 2D and 3D computer chips will also be discussed. The last section of the talk will have a description of the data for graphene TIM materials. We found that thermal conductivity of several types of epoxy TIMs can be significantly increased by an addition of the chemically derived graphene even at very small graphene's loading fractions. The increase in the effective thermal conductivity of graphene TIMs is much stronger than that for conventional filler materials [7]. A general outlook at the prospects of graphene electronics will conclude the talk.","PeriodicalId":128077,"journal":{"name":"2011 27th Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 27th Annual IEEE Semiconductor Thermal Measurement and Management Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STHERM.2011.5767183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

As the electronic industry moves towards few-nanometer-scale CMOS and 3D IC designs thermal management becomes crucially important for achieving high performance and reliability of advanced electronic chips [1]. One approach for mitigating the self-heating problems is finding materials with very high thermal conductivity, which can be integrated with Si ICs or used as fillers in the next generation of the thermal interface materials (TIMs). In 2008, we discovered that graphene reveals extremely high intrinsic thermal conductivity, which can exceed that of bulk graphite [2–3]. To measure the thermal conductivity of an object with a thickness of just one atomic layer, we developed an original experimental technique and applied it to graphene flake suspended across trenches in Si wafers. In this technique, the micro-Raman spectrometer performed the function of a thermometer measuring the local temperature rise from the shift in the spectral position of the Raman G peak. We explained the fact that the intrinsic thermal conductivity of graphene can be larger than that of graphite by the fundamental difference in the low-energy phonon transport in 2D graphene and 3D graphite [4–6]. The extremely high thermal conductivity of “free” suspended graphene does not mean that it will be automatically preserved when graphene is incorporated inside semiconductor chips or composite TIMs. Thermal conductivity of graphene layers depends strongly on their geometrical size, coupling to the adjacent substrate or capping layers, edges roughness and defect concentration. I will overview the experimental and theoretical results for the thermal conductivity evolution of the few-layer graphene (FLG) considering two limiting cases of the phonon transport limited by the intrinsic and extrinsic effects. The use of graphene as interconnects and heat spreaders in advanced 2D and 3D computer chips will also be discussed. The last section of the talk will have a description of the data for graphene TIM materials. We found that thermal conductivity of several types of epoxy TIMs can be significantly increased by an addition of the chemically derived graphene even at very small graphene's loading fractions. The increase in the effective thermal conductivity of graphene TIMs is much stronger than that for conventional filler materials [7]. A general outlook at the prospects of graphene electronics will conclude the talk.
石墨烯的导热性能:热管理应用前景
随着电子工业向纳米级CMOS和3D IC设计发展,热管理对于实现先进电子芯片[1]的高性能和可靠性变得至关重要。减轻自热问题的一种方法是寻找具有非常高导热性的材料,这些材料可以与Si集成电路集成或用作下一代热界面材料(TIMs)的填料。2008年,我们发现石墨烯显示出极高的固有导热系数,可以超过大块石墨[2-3]。为了测量只有一个原子层厚度的物体的热导率,我们开发了一种独创的实验技术,并将其应用于悬浮在硅晶片沟槽上的石墨烯薄片。在该技术中,微拉曼光谱仪执行温度计的功能,测量拉曼G峰光谱位置的位移引起的局部温升。我们解释了二维石墨烯和三维石墨烯中低能声子输运的根本差异,从而使石墨烯的固有导热系数大于石墨[4-6]。“自由”悬浮石墨烯的极高导热性并不意味着当石墨烯被纳入半导体芯片或复合TIMs中时,它会自动保存。石墨烯层的导热性在很大程度上取决于其几何尺寸、与邻近基板或盖层的耦合、边缘粗糙度和缺陷浓度。本文将概述考虑到声子输运受内在和外在效应限制的两种极限情况下,少层石墨烯(FLG)导热演化的实验和理论结果。在先进的2D和3D计算机芯片中,石墨烯作为互连和散热材料的使用也将被讨论。讲座的最后一部分将介绍石墨烯TIM材料的数据。我们发现,即使在非常小的石墨烯负载分数下,加入化学衍生的石墨烯也可以显著提高几种环氧TIMs的导热性。石墨烯TIMs的有效热导率的增加比传统填充材料[7]强得多。最后,我们将对石墨烯电子学的发展前景进行展望。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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