On N-Shaped I-V Characteristic Devices with Memristive Behavior

Abstract

The small-signal model of an n-shaped I-V characteristic device with a resistance memory (memristor) is considered in this work. The implications of this memristance property on a typical application of these devices in negative differential resistance oscillators is considered. It is shown thru theory and simulation that the n-shaped I-V device with memristance demonstrates distinct differences from the device without memristance.