SOI substrates for More than Moore roadmap

Abstract

This last decade silicon-on-insulator (SOI) MOSFET technology has demonstrated its potentialities for high frequency (reaching cut-off frequencies close to 500 GHz for nMOSFETs) and for harsh environments (high temperature, radiation) commercial applications. SOI also presents high resistivity substrate capabilities, leading to substantially reduced substrate losses. SOI technology is also emerging as a major contender for heterogeneous microsystems applications. In this work, we demonstrate the advantages of SOI technology for RF CMOS integration as well as for building thin film sensors on thin dielectric membrane and three-dimensional microelectromechanical (MEMS) sensors and actuators co-integrated with their associated SOI CMOS circuitry.