Electron emission from diamond layer on tungsten wire measured in cylindrical electrode configuration

J. Janı́k, F. Balon, A. Kromka, V. Dúbravcová, M. Kadlecíková, P. Krepsova
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引用次数: 2

Abstract

Negative electron affinity of diamond layers can successfully be used for field electron emission applications. There are many devices, where cold electron emission is needed For example, electron microscope, flat panel displays, cathodes of screens and others may employ the negative electron affinity of diamond. The aim of this work was to prepare diamond layers on wire substrates in order to provide field electron emission with great stability and low threshold voltage. The prepared diamond layers on tungsten wires showed such electron field emission properties. They provided a current density of J=0.4 mA/cm/sup 2/ at 3 V//spl mu/m while the turn-on field was about 2 V//spl mu/m. The effective work function estimated from the Fowler-Nordheim plot of the I-V curve was /spl Phi/=0.05 eV. The surfaces of emitters have been investigated by micro-Raman spectroscopy and optical microscopy.
在圆柱形电极结构下测量钨丝上金刚石层的电子发射
金刚石层的负电子亲和力可以成功地用于场电子发射应用。有许多设备需要冷电子发射,例如电子显微镜、平板显示器、屏幕阴极等都可以利用金刚石的负电子亲和力。这项工作的目的是在线基上制备金刚石层,以提供具有高稳定性和低阈值电压的场电子发射。在钨丝上制备的金刚石层具有这样的电子场发射特性。它们在3v //spl mu/m时提供的电流密度为J=0.4 mA/cm/sup /,而导通场约为2v //spl mu/m。根据I-V曲线的Fowler-Nordheim图估计的有效功函数为/spl Phi/=0.05 eV。用微拉曼光谱和光学显微镜对发射体表面进行了研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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