Hybrid simulation of plasma synthesis of linear-chain carbon on a semiconductor substrate

Abstract

The paper presents the results of modeling the plasma synthesis of a carbon coating using ion stimulation. The hybrid quantum-classical method of molecular dynamics was used for the work. The effect of ion stimulation on the growth of a carbon film, as well as on the ratio of hybridization of carbon atoms in its composition, has been studied. Calculations have shown that ion stimulation with energies up to 20 eV increases the number of adsorbed carbon atoms. It was found that the content of sp1, sp2 and sp3carbon is maximum at argon energies of 40, 70, 90 eV, respectively.