112Gb/s PAM4 electro-optic modulator based on Thin-film LN-on-insulator

International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA) Pub Date : 2019-11-11 DOI:10.1364/oedi.2019.ow1b.3

Chenglin Shang, An Pan, Changran Hu, Tingan Li, J. Xia, C. Zeng

引用次数: 0

Abstract

We report the demonstration of a thin-film LiNbO3 modulator with modulation data rate up to 112 Gb/s (56 Gbaud PAM4). The MZI modulator exhibits an electro-optic phase efficiency of V⋅L=2.6V⋅cm and a 6 dB electro-optic bandwidth exceeding 60 GHz.

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基于绝缘体上薄膜ln的112Gb/s PAM4电光调制器

我们报道了一种调制数据速率高达112 Gb/s (56 Gbaud PAM4)的薄膜LiNbO3调制器的演示。MZI调制器具有V⋅L=2.6V⋅cm的电光相位效率和超过60 GHz的6db电光带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA)

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