SEM and SPM studies of single-shot damage on silicon

Hsiao-hua Liu, G. Mourou, J. P. McDonald, Y. Picard, S. Yalisove, T. Juhász
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Abstract

Scanning probe microscopy was used to study femtosecond laser ablation of silicon as a function of laser wavelength, doping concentration, and sample temperature to gain a greater understanding of the femtosecond laser damage mechanism.
硅单次损伤的SEM和SPM研究
利用扫描探针显微镜研究了飞秒激光对硅的烧蚀与激光波长、掺杂浓度和样品温度的关系,以更好地了解飞秒激光损伤机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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