A high-efficiency power MOSFET used as the control element in an 800-volt switch

Abstract

The advantages of a new generation of lowvoltage, dense geometry (1.6 million cells /in.2) power MOSFETs for switching applications is discussed. These devices provide a factor of two lower on-resistance per unit area with a substantial reduction in capacitance. An emitterswitched high-voltage BJT is used as a design example. The discussion on emitter open switching will bring to light several new aspects of this type of BJT operation.