{"title":"A Broadband Continuous Class-FGaN MMIC PA Using Multi-Resonance Matching Network","authors":"G. Nikandish, R. Staszewski, A. Zhu","doi":"10.23919/EuMIC.2019.8909495","DOIUrl":null,"url":null,"abstract":"In this paper, we present a design technique for broadband harmonic-tuned monolithic microwave integrated circuit (MMIC) power amplifiers (PAs). A multi-resonance harmonic matching network is proposed for the continuous class -F mode operation, featuring low loss and compact chip area for integrated PA realization. A design procedure is developed for this network, considering low quality factor and electromigration current density limitation of on-chip inductors. A proof-of-concept GaN MMIC PA, implemented in a 0.25-$\\mu$ m GaN-on-SiC technology, provides 33. 9-36.ldBm output power and 38-48% power-added efficiency (PAE) in the frequency band 4-6GHz. For a 64-QAM signal with 100 MHz modulation bandwidth and 8 dB peak-to-average power ratio (PAPR), at 5 GHz, the average output power of 30.2 dBm and average PAE of 32% are achieved, while the error vector magnitude (EVM) is -32dB.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EuMIC.2019.8909495","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
In this paper, we present a design technique for broadband harmonic-tuned monolithic microwave integrated circuit (MMIC) power amplifiers (PAs). A multi-resonance harmonic matching network is proposed for the continuous class -F mode operation, featuring low loss and compact chip area for integrated PA realization. A design procedure is developed for this network, considering low quality factor and electromigration current density limitation of on-chip inductors. A proof-of-concept GaN MMIC PA, implemented in a 0.25-$\mu$ m GaN-on-SiC technology, provides 33. 9-36.ldBm output power and 38-48% power-added efficiency (PAE) in the frequency band 4-6GHz. For a 64-QAM signal with 100 MHz modulation bandwidth and 8 dB peak-to-average power ratio (PAPR), at 5 GHz, the average output power of 30.2 dBm and average PAE of 32% are achieved, while the error vector magnitude (EVM) is -32dB.