Experimental demonstration and modelling of optoelectronic mixing and digital modulation in a single InP photo heterojunction bipolar transistor

International Topical Meeting on Microwave Photonics MWP 2000 (Cat. No.00EX430) Pub Date : 2000-09-11 DOI:10.1109/MWP.2000.889823

A. Bilenca, J. Lasri, G. Eisenstein, D. Ritter, M. Orenstein, V. Sidorov, S. Cohen, P. Goldgeier

引用次数: 3

Abstract

We describe microwave signal generation and digital modulation by optoelectronic mixing in a single InGaAs-InP heterojunction bipolar phototransistor. Modeling and experimental verification are demonstrated for 10 and 45 GHz signals modulated at rates up to 2.5 Gb/s.

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单InP光异质结双极晶体管的光电混合和数字调制实验演示和建模

我们描述了在单InGaAs-InP异质结双极光电晶体管中光电混合产生微波信号和数字调制。对速率高达2.5 Gb/s的10 GHz和45 GHz信号进行了建模和实验验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Topical Meeting on Microwave Photonics MWP 2000 (Cat. No.00EX430)

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