Abnormal device performance in transferred multilayer MoS2 field-effect transistors

Abstract

Layered molybdenum disulfide (MoS2) is one of the representative two-dimensional (2D) semiconductors, offering a tantalizing prospect in the application of nanoelectronic devices and circuits. Here abnormal electrical and optoelectrical characteristics in transferred multilayer MoS2 transistors are observed and discussed. Such phenomena can be explained by the MoS2 intrinsic defects and the trapped charge impurities at the MoS2-dielectric and MoS2-MoS2 interfaces, as well as its charge screening effect. Our findings highlight the significance of controlling the dielectric interface and the material quality of 2D semiconductors, which are critical for the reliability of future 2D nanoelectronic devices.