{"title":"Graphene Nano-ribbon Tunnel Field Effect Transistor based Bio-Sensors:Device Characteristics","authors":"G. Nayana, P. Vimala, V. Anandi","doi":"10.1109/PhDEDITS56681.2022.9955296","DOIUrl":null,"url":null,"abstract":"Biosensors has created a revolution in the area of research post pandemic situation. There are many ways to detect bio-molecules. The device that has gained huge popularity to detect the bio-molecules is the Field-Effect Transistor. It has higher ability to detect and its sensitivity is better with reduced device size and yields quick reactive and response time. But MOSFETs suffer from limitation of subthreshold swing of 60mV/decade. New device architecture with new device material is the need of the hour. Graphene Nanoribbon Tunnel Field Effect Transistor (GNR-TFET) device structure is presented and simulated for capturing device characteristics for bio-molecular application.","PeriodicalId":373652,"journal":{"name":"2022 IEEE 4th PhD Colloquium on Emerging Domain Innovation and Technology for Society (PhD EDITS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 4th PhD Colloquium on Emerging Domain Innovation and Technology for Society (PhD EDITS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PhDEDITS56681.2022.9955296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Biosensors has created a revolution in the area of research post pandemic situation. There are many ways to detect bio-molecules. The device that has gained huge popularity to detect the bio-molecules is the Field-Effect Transistor. It has higher ability to detect and its sensitivity is better with reduced device size and yields quick reactive and response time. But MOSFETs suffer from limitation of subthreshold swing of 60mV/decade. New device architecture with new device material is the need of the hour. Graphene Nanoribbon Tunnel Field Effect Transistor (GNR-TFET) device structure is presented and simulated for capturing device characteristics for bio-molecular application.