X. Zhang, V. Spiridonov, D. I. Panov, I. Sosnin, A. Romanov
{"title":"Preparation of Ga2O3 Thin Films by Sol-Gel Method—a Concise Review","authors":"X. Zhang, V. Spiridonov, D. I. Panov, I. Sosnin, A. Romanov","doi":"10.17586/2687-0568-2023-5-2-10-24","DOIUrl":null,"url":null,"abstract":"Nowadays, gallium oxide (Ga2O3) as a wide bandgap semiconductor material is acquiring more and more attention in various practical areas. As a result, there has been a lot of efforts to fabricate and study bulk Ga2O3 material, Ga2O3 thin films, and Ga2O3 nanowires. For Ga2O3 films, there exists a variety of preparation methods such as metal-organic chemical vapor deposition, hydride vapor phase epitaxy, pulsed laser deposition, molecular beam epitaxy, frequency magnetron sputtering, atomic layer deposition, wet chemistry, and sol-gel. This concise review focuses on the preparation of Ga2O3 thin films by sol-gel methods. Sol-gel methods include dip-coating, spin-coating, spray pyrolysis, and drop casting technique. The details on the fabrication of β-Ga2O3 thin films by sol-gel method are summarized and prospected. Polymorphism, structure and properties of sol-gel prepared Ga2O3 films are discussed.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Reviews on Advanced Materials and Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.17586/2687-0568-2023-5-2-10-24","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Nowadays, gallium oxide (Ga2O3) as a wide bandgap semiconductor material is acquiring more and more attention in various practical areas. As a result, there has been a lot of efforts to fabricate and study bulk Ga2O3 material, Ga2O3 thin films, and Ga2O3 nanowires. For Ga2O3 films, there exists a variety of preparation methods such as metal-organic chemical vapor deposition, hydride vapor phase epitaxy, pulsed laser deposition, molecular beam epitaxy, frequency magnetron sputtering, atomic layer deposition, wet chemistry, and sol-gel. This concise review focuses on the preparation of Ga2O3 thin films by sol-gel methods. Sol-gel methods include dip-coating, spin-coating, spray pyrolysis, and drop casting technique. The details on the fabrication of β-Ga2O3 thin films by sol-gel method are summarized and prospected. Polymorphism, structure and properties of sol-gel prepared Ga2O3 films are discussed.