B. Govoreanu, S. Kubicek, J. Jussot, B. T. Chan, N. Dumoulin-Stuyck, F. Mohiyaddin, R. Li, G. Simion, T. Ivanov, D. Mocuta, Jae Woo Lee, I. Radu
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引用次数: 8
Abstract
We discuss the key features of a 300mm integrated Silicon MOS platform to serve as a basis for spin-qubit device exploration. The process yields structures with a pitch of 100nm and below, without bearing the complexity of advanced optical lithography, and retains high flexibility for fast device design adjustment.
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