A two heterojunction bipolar photo-transistor configuration for millimeter wave generation and modulation

International Topical Meeting on Microwave Photonics MWP 2000 (Cat. No.00EX430) Pub Date : 2000-09-11 DOI:10.1109/MWP.2000.889786

J. Lasri, A. Bilenca, G. Eisenstein, D. Ritter, M. Orenstein, V. Sidorov, S. Cohen, P. Goldgeier

引用次数: 0

Abstract

We describe an advanced millimeter wave source employing two InP-InGaAs heterojunction bipolar photo-transistors. One, functioning as a 30 GHz self oscillator, was optically injection locked. The second acts as an optoelectronic mixer/modulator for analog and digital signals.

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一种用于毫米波产生和调制的双异质结双极光电晶体管结构

我们描述了一种采用两个InP-InGaAs异质结双极光电晶体管的先进毫米波源。其中一个，作为一个30 GHz的自振荡器，是光注入锁定的。第二种作为模拟和数字信号的光电混频器/调制器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Topical Meeting on Microwave Photonics MWP 2000 (Cat. No.00EX430)

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