Broadband quasi-optical sub-THz detector based on GaAs HEMT

Abstract

This paper presents design and testing of a broadband quasi-optical sub-THz detector based on a GaAs/AlGaAs HEMT transistor monolithically integrated with an antenna and mounted on a high-resistivity silicon hyper- spherical lens. Comparative measurements of the fabricated device have been performed to reveal that the responsivity of the resulting detector in the frequency range of 100–200 GHz is on the order of 150 V/W while in the range of 200–300 GHz it falls to ca. 30 V/W.