Crosstalk in coupled microstrip lines due to substrate permittivity and S/h ratios

Abstract

The Finite Element Method (FEM) is used to determine the magnitude of crosstalk due to substrate permittivities and S/h ratios in a pair of parallel coplanar microstrip lines. One trace is driven by an ideal current source (generator strip) and the other line is a passive (receptor) strip. At the operating frequency of 200 MHz, the dielectric of the substrates is assumed to be lossless and homogeneous. Computed results when compared with the results obtained from analytical formulation show a good agreement. Further, the study indicates that an increase in the substrate permittivity would increase the crosstalk.