Electron-only explicit screening quantum transport model for semiconductor nanodevices

Abstract

State of the art quantum transport models for semi-conductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation that yield model dependent charge contributions. In any nanodevice structure, these models rely on device and physics specific input for the dielectric constants. This work exemplifies the large variability of different charge interpretation models when applied to ultrathin body transistor performance predictions. To solve this modeling challenge, an electron-only band structure model is extended to atomistic quantum transport. Performance predictions of MOSFETs and tunneling FETs confirm the generality of the new model and its independence of additional screening models.