The annealing process of R.F. magnetron sputtered ZnO:Al films

2007 Asia Optical Fiber Communication and Optoelectronics Conference Pub Date : 2007-12-26 DOI:10.1109/AOE.2007.4410872

Yu Zhi-nong, Xu Jin, Xue Wei, L. Jinwei

引用次数: 0

Abstract

The ZnO:AI films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10-3 Omegaldrcm was obtained in the condition of vacuum annealing at 220degC.

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射频磁控溅射ZnO:Al薄膜的退火工艺

对ZnO:AI薄膜进行了不同气氛下的退火处理。与在空气和氩气中退火的薄膜相比，真空退火的薄膜性能较好，在220℃的真空退火条件下获得了10-3 ω - drcm数量级的低电阻率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2007 Asia Optical Fiber Communication and Optoelectronics Conference

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