A 73.9–83.5GHz synthesizer with −111dBc/Hz phase noise at 10MHz offset in a 130nm SiGe BiCMOS technology

Abstract

A 73.9-83.5 GHz synthesizer is implemented in a 130nm SiGe BiCMOS technology. The measured phase noise at 10KHz and 10MHz offset of the 82.4GHz carrier are -88.5dBc/Hz and -111dBc/Hz respectively. Reference spurs are -67 dBc. The synthesizer integrates voltage regulators and power management for SoC applications; it consumes 0.51 W from 1.5 V and 2.7 V supplies, and occupies 0.85 mm × 2.9 mm.