>110 GHz High-Power Photodiode by Flip-Chip Bonding

Abstract

We experimentally demonstrate >110 GHz charge-compensated modified uni-traveling carrier (CC-MUTC) photodiodes by flip-chip bonding on diamond submount. The typical dark current is ~200 nA at −3 V bias voltage and the measured responsivity reaches 0.15 A/W. Photodiodes with 6-μm, 8-μm, and 10-μm diameter exhibit 3-dB bandwidths of >110 GHz, 90 GHz, and 80 GHz, respectively. The RF output power reaches 8.4 dBm at 90 GHz at room temperature.