Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention

Abstract

By introducing a heavily doped region in the metal-ferroelectric-semiconductor (MFS) structure, for the first time, we report an inversion-type ferroelectric capacitive memory (FCM) device which simultaneously achieves (1) high (×125) CHCS/CLCS ratio, (2) 10-year retention under 85 ℃, (3) multi-state operation, and (4) improved write speed in nanosecond range. Integrating the devices on SOI substrates, we also realize the world’s first 1 kbit inversion-type FCM crossbar array and demonstrate successful read/write operation with a specially-designed array drive and test system.