Carbon Nanotube Memories and Fabrics in a Radiation Hard Semiconductor Foundry

Abstract

This paper details the results of a project to transition Nantero's laboratory carbon nanotube (CNT) process technology into the BAE Systems radiation-hard CMOS production foundry to enable the development of novel nanotechnology-based solutions for government space applications. Working jointly, BAE Systems and Nantero have successfully developed the necessary processes, recipes, and protocols to enable BAE Systems to develop rad-hard CMOS-CNT hybrid devices and circuits. The success of this project has established the BAE Systems Manassas, VA facility as the first U.S. government sponsored foundry to qualify carbon nanotubes for use within a production fab line. The project addressed all aspects needed to qualify nanotubes and comprised three main steps: 1) development of recipes for coating a 150 mm wafer with a monolayer fabric of single-walled nanotubes (SWNTs), 2) edge-bead removal (EBR) of the CNTs from around the edge, bevel, and backside of the wafer to prevent contamination of further processing equipment, 3) demonstration of repeatable coating and EBR of the CNTs between various wafers over multiple lots. The fabrication process for creating a 1-2 nm thick monolayer fabric of SWNTs is described and characterized with respect to the fabric thickness, resistivity, elemental composition, particle count and uniformity