Excess low frequency noises in some electronic materials and components

K. Takagi
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Abstract

We devised burst noise eliminating equipment and characterized the 1/f and burst noise in some electronic materials, components, electric contacts and bipolar transistors. The burst-eliminated noise spectrum is the 1/f type. The noise intensity is proportional to the square of the current and to the fifth power of the contact resistance. This contact resistance dependence of the noise is analyzed with the constriction resistance of the contact surface material. The measured results are also shown in the amplitude and phase fluctuations in the transistor collector current. They are also of 1/f type and correlate each other. On the other hand, we did not find this correlation in another transistor with burst noise. Hence, the 1/f fluctuation is considered to be due to diffusion or mobility fluctuation and the burst noise is not due to the diffusion process in the solid.
某些电子材料和元件中过量的低频噪声
设计了突发噪声消除装置,对一些电子材料、元件、电触点和双极晶体管的1/f和突发噪声进行了表征。突发消除噪声谱为1/f型。噪声强度与电流的平方和接触电阻的五次方成正比。结合接触面材料的收缩阻力分析了噪声与接触电阻的关系。测量结果也显示在晶体管集电极电流的幅度和相位波动中。它们也是1/f型,并且彼此相关。另一方面,我们在另一个具有突发噪声的晶体管中没有发现这种相关性。因此,1/f波动被认为是由于扩散或迁移率波动引起的,而爆炸噪声不是由于固体中的扩散过程引起的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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