Simulation of optically biased, edge coupled InP/InGaAs phototransistors

Abstract

A theoretical investigation has been made of an optically biased, two terminal InP/In/sub 0.33/Ga/sub 0.47/As photo-heterojunction bipolar transistor, using drift diffusion and Monte Carlo models. Comparisons have been made using both models with experimental data for two device structures. Good agreement has been found between the drift diffusion model and experiment for the optical gain, but poorer agreement with the cutoff frequency and current-voltage characteristics. Results from the Monte Carlo model show that discrepancies between the drift-diffusion results and experimental current-voltage characteristics are likely to be due to hot electron effects within the devices.