L-BAND GaAs MMIC amplifier

2008 18th International Crimean Conference - Microwave & Telecommunication Technology Pub Date : 2008-11-18 DOI:10.1109/CRMICO.2008.4676296

S. V. Bezus, S. Tolstolutskiy, A.I. Lee, A. V. Tolstolutskaja, V. V. Kazatchkov, V.P. Komor

引用次数: 0

Abstract

MMIC amplifier development results have been presented. The amplifier chip with dimensions of 2.0 times 1.8 mm2 has been made to provide gain about 6 dB and VSWR 1.6.

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l波段GaAs MMIC放大器

介绍了MMIC放大器的研制结果。放大芯片的尺寸为2.0 × 1.8 mm2，增益约为6db，驻波比约为1.6。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 18th International Crimean Conference - Microwave & Telecommunication Technology

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