High speed GaAs and GaInAs high radiance light emitting diodes

Abstract

High radiance high speed homojunction GaAs and GaInAs VPE LEDs are shown to have frequency responses composed of two parts, a slow response, with cut off at ∼ 100 MHz and a fast response with cut off > 1.5 GHz. These responses are shown to arise from hole recombination in the n-side and electron recombination in the p-side of the junction respectively. The devices are of a sufficiently high radiance that about 80µW can be launched C.W. into a 0.16NA, 85µm core step index fibre at 500MHz, using microlens coupling.