A transistor measurement setup for microwave high power amplifiers design

Abstract

This paper presents our view of a powerful and versatile measurement setup dedicated to nonlinear characterization and modeling of high power transistor. Our bench with on-wafer capabilities captures time domain waveforms under passive load-pull and source-pull conditions. Moreover, harmonic load-pull and pulsed mode of I(V) and/or RF operation are available. Due to the combination of several innovative features, high power measurements up to 18 GHz and 50 Watts with a gamma load factor up to 0.85 at the probe tips are made possible.